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| ZXMP3A16DN8 DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.045 ; ID= -5.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package SO8 APPLICATIONS * Motor Drive * LCD backlighting ORDERING INFORMATION DEVICE ZXMP3A16DN8TA ZXMP3A16DN8TC REEL 7'` 13'` TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units PINOUT DEVICE MARKING ZXMP 3A16 Top view PROVISIONAL ISSUE C - JULY 2004 1 ZXMP3A16DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V GS =10V; T A =25 C (b)(d) @V GS =10V; T A =70 C (b)(d) @V GS =10V; T A =25 C (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25C (a)(d) Linear Derating Factor Power Dissipation at T A =25C (a)(e) Linear Derating Factor Power Dissipation at T A =25C (b)(d) Linear Derating Factor Operating and Storage Temperature Range (b) SYMBOL V DSS V GS ID LIMIT -30 20 -5.5 -4.4 -4.2 -20 -3.2 -20 1.25 10 1.8 14 2.1 17 -55 to +150 UNIT V V A A A A A A W mW/C W mW/C W mW/C C I DM IS I SM PD PD PD T j :T stg THERMAL RESISTANCE PARAMETER Junction to Ambient Junction to Ambient Junction to Ambient Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t 10 sec. (a)(d) (b)(e) (b)(d) SYMBOL R JA R JA R JA VALUE 100 70 60 UNIT C/W C/W C/W (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power. PROVISIONAL ISSUE C - JULY 2004 2 ZXMP3A16DN8 CHARACTERISTICS Max Power Dissipation (W) -ID Drain Current (A) RDS(on) 10 Limited 1 DC 1s 100ms Single Pulse Tamb=25C One active die 10ms 1ms 100s 100m 10m 100m -VDS Drain-Source Voltage (V) 1 10 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 Two active die One active die 20 40 60 80 100 120 140 160 Temperature (C) Safe Operating Area 110 Tamb=25C 100 90 One active die 80 70 60 D=0.5 50 40 Single Pulse 30 D=0.2 20 D=0.05 10 D=0.1 0 100 1m 10m 100m 1 10 100 1k Derating Curve Single Pulse Tamb=25C One active die Thermal Resistance (C/W) MaximumPower (W) 100 10 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation PROVISIONAL ISSUE C - JULY 2004 3 ZXMP3A16DN8 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs -30 -1.0 100 -1.0 0.045 0.070 9.2 V A nA V I D =-250A, V GS =0V V DS =-30V, V GS =0V V GS = 20V, V DS =0V I =-250 A, D V DS = V GS V GS =-10V, I D =-4.2A V GS =-4.5V, I D =-3.4A S V DS =-15V,I D =-4.2A Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) C iss C oss C rss 970 166 116 pF pF pF V DS =-15 V, V GS =0V, f=1MHz Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) t d(on) tr t d(off) tf Qg Qg Q gs Q gd 3.8 6.1 35 19 12.9 24.9 2.67 3.86 ns ns ns ns nC nC nC nC VDS=-15V,VGS=-10V, I D =-4.2A V DS =-15V,V GS =-5V, I D =-4.2A V DD =-15V, I D =-1A R G =6.0, V GS =-10V V SD t rr Q rr -0.85 21.2 18.7 -0.95 V ns nC T J =25C, I S =-3.6A, V GS =0V T J =25C, I F =-2A, di/dt= 100A/s NOTES (1) Measured under pulsed conditions. Width 300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE C - JULY 2004 4 ZXMP3A16DN8 TYPICAL CHARACTERISTICS T = 25C 10V 4V -ID Drain Current (A) 10 -ID Drain Current (A) 3.5V 3V 2.5V 2V -VGS T = 150C 10V 4V 10 3.5V 3V 2.5V 2V 1.5V 1 1 -VGS 0.1 1.5V 0.1 0.01 0.1 -VDS Drain-Source Voltage (V) 1 10 0.01 0.1 -VDS Drain-Source Voltage (V) 1 10 Output Characteristics 1.6 T = 150C T = 25C Output Characteristics VGS = -10V ID = -4.2A RDS(on) Normalised RDS(on) and VGS(th) 10 -ID Drain Current (A) 1.4 1.2 1.0 0.8 0.6 0.4 -50 0 1 VGS(th) VGS = VDS ID = -250uA -VDS = 10V 0.1 1 2 3 50 100 150 -VGS Gate-Source Voltage (V) Tj Junction Temperature (C) Typical Transfer Characteristics 100 RDS(on) Drain-Source On-Resistance () -ISD Reverse Drain Current (A) Normalised Curves v Temperature 100 10 1 0.1 0.01 0.01 1.5V -VGS 2V T = 25C T = 150C 10 1 0.1 T = 25C 2.5V 3V 3.5V 4V 10V 0.1 1 10 0.01 0.0 -ID Drain Current (A) -VSD Source-Drain Voltage (V) 0.2 0.4 0.6 0.8 1.0 1.2 On-Resistance v Drain Current Source-Drain Diode Forward Voltage PROVISIONAL ISSUE C - JULY 2004 5 ZXMP3A16DN8 TYPICAL CHARACTERISTICS C Capacitance (pF) 1200 1000 800 600 400 200 0 0.1 1 CISS COSS -VGS Gate-Source Voltage (V) 1400 10 VGS = 0V f = 1MHz -ID = 4.2A 8 6 4 2 -VDS = 15V CRSS 10 0 0 5 10 15 20 25 -VDS - Drain - Source Voltage (V) Q - Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge PROVISIONAL ISSUE C - JULY 2004 6 ZXMP3A16DN8 PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES PACKAGE DIMENSIONS Millimeters DIM Min A A1 D H E 1.35 0.10 4.80 5.80 3.80 Max 1.75 0.25 5.00 6.20 4.00 Min 0.053 0.004 0.189 0.228 0.150 Max 0.069 0.010 0.197 0.244 0.157 h e b c Inches DIM Min Max Min Max 1.27 BSC 0.33 0.19 0 0.25 0.51 0.25 8 0.50 0.050 BSC 0.013 0.008 0 0.010 0.020 0.010 8 0.020 Millimeters Inches (c) Zetex Semiconductors plc 2004 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com PROVISIONAL ISSUE C - JULY 2004 7 |
Price & Availability of ZXMP3A16DN8TC
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